FNK06NS04E mosfet equivalent, n-channel power mosfet.
* VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ)
Top View
18 27 36 45
Schematic diagram
* High density cell de.
General Features
* VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.9mΩ @ VGS=4.5V (Typ:3.8mΩ)
.
The FNK06NS04E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS = 60V,ID =110A RDS(ON) < 3.3mΩ @ VGS=10V (Typ:2.5mΩ) RDS(ON) < 4.
Image gallery
TAGS