FNK06N02C - N-Channel Enhancement Mode Power MOSFET

Description

The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

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FNK06N02C N-Channel Enhancement Mode Power MOSFET by FNK - Datasheet Preview — Datasheet preview – FNK06N02C

Datasheet Details

Part number	FNK06N02C
Manufacturer	FNK
File Size	248.67 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	FNK06N02C Datasheet
Additional preview pages of the FNK06N02C datasheet.

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Full PDF Text Transcription

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FNK06N02C N-Channel Enhancement Mode Power MOSFET DESCRIPTION The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V DS(ON)<10.0mΩ @ VGS=2.

Published: Jul 29, 2015 |