FNK06N02C mosfet equivalent, n-channel enhancement mode power mosfet.
The FNK06N02Cuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
ID = 50A RDS(ON)< 7.5mΩ @ VGS=4.5V
DS(ON)<10.0mΩ @ VGS=2.5V
* High Power and current handing capability
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