FNK02N09S datasheet, mosfet equivalent, FNK

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Features and benefits

* VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD Rating: 2000V HBM
* High power and current handing capability
* Lead free product .

Application

.It is ESD protested. General Features
* VDS = 20V,ID =15A RDS(ON) < 15mΩ @ VGS=2.5V RDS(ON) < 10mΩ @ VGS=4.5V ESD .

Description

The FNK02N09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested. General Featur.

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