FNK0203EB mosfet equivalent, n-channel power mosfet.
* VDS = 20V,ID =15A RDS(ON) <13.5mΩ @ VGS=2.5V R DS(ON) < 9.5mΩ @ VGS=4.5V ESD Rating: 2500V HBM
* High power and current handing
capability
* Lead free produ.
.It is ESD protested.
General Features
* VDS = 20V,ID =15A RDS(ON) <13.5mΩ @ VGS=2.5V R DS(ON) < 9.5mΩ @ VGS=4.5V ES.
The FNK0203EB uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.
General Feature.
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