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FNK02N08E - N-Channel Power MOSFET

Description

The FNK02N08E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application.

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Datasheet Details

Part number FNK02N08E
Manufacturer FNK
File Size 1.43 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK02N08E Datasheet

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20V N-Channel MOSFET General Description The FNK02N08E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.5V while retaining a 12V VGS(MAX) rating.This device is suitable for use as load switch and general purpose FET application. Product Summary VDS (V) = 20V ID = 20A RDS(ON) < 7.5mΩ (VGS = 4.5V) RDS(ON) < 12mΩ (VGS = 2.5V) 18 27 36 45 Top View FNK02N08E D G S V2#W$(3ÿ2(Uÿ%$(ÿQ!!$3(T4(&ÿ Package Marking And Ordering Information Device Marking Device Device Package FNK02N08E FNK02N08E DFN3.3x3.
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