FNK01NS12T mosfet equivalent, n-channel power mosfet.
* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.
FNK01NS12T
General Features
* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ)
* High density cell d.
The FNK01NS12T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
FNK01NS12T
General Features
* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V
(Typ:3.3mΩ.
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