FNK01N15T mosfet equivalent, n-channel power mosfet.
* VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:5.0? mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and curre.
General Features
* VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:5.0? mΩ)
* High density cell design for .
The FNK01N15T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =100V,ID =150A RDS(ON) <5.7mΩ @ VGS=10V
(Typ:5.0? mΩ)
* Hi.
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