FNK01N30T mosfet equivalent, n-channel power mosfet.
* VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）
* Good stability and uniformity with high EAS
* High density cell design for ultra low Rdson
*.
General Features
* VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）
* Good stability and uniformity wi.
The FNK01N30T uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of other applications.
General Features
* VDSS =100V,ID =300A RDS(ON) < 3.3mΩ @ VGS=10V （Typ：2.7mΩ）
*.
Image gallery
TAGS
Download (Size : 1.05MB)