FNK01NS12 datasheet, mosfet equivalent, FNK

Features and benefits

* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current.

Application

FNK01NS12 General Features
* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ)
* High density cell de.

Description

The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK01NS12 General Features
* VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.3mΩ) .

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