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FNK01NS12 - N-Channel Power MOSFET

General Description

The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =100V,ID =120A RDS(ON).

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Datasheet Details

Part number FNK01NS12
Manufacturer FNK
File Size 1.18 MB
Description N-Channel Power MOSFET
Datasheet download datasheet FNK01NS12 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FNK N-Channel Enhancement Mode Power MOSFET Description The FNK01NS12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FNK01NS12 General Features ● VDS =100V,ID =120A RDS(ON) <4.2mΩ @ VGS=10V (Typ:3.