Datasheet4U Logo Datasheet4U.com

EMP21N03HR - N-Channel Logic Level Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number EMP21N03HR
Manufacturer Excelliance MOS
File Size 944.31 KB
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet download datasheet EMP21N03HR Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
EMP210 9.5 - 12 GHz Power Amplifier MMIC Excelics Semiconductor
EMP211 9.5 - 12.0 GHz Power Amplifier MMIC Excelics Semiconductor
EMP212 9.50 - 12.0 GHz Power Amplifier MMIC Excelics Semiconductor
EMP213 12.5 - 15.5 GHz Power Amplifier MMIC Excelics Semiconductor
EMP2133 300mA CMOS Linear Regulator Elite Semiconductor

Other Datasheets by Excelliance MOS

Part Number Description
EMP21N03HC N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP26P03H Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP29N04AS Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP29N04E N-Channel Logic Level Enhancement Mode Field Effect Transistor
EMP16N04HS MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V RDSON (MAX.) 2.3mΩ ID 100A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (Tc = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage VGS Continuous Drain Current1 Pulsed Drain Current2 TC = 25 °C ID TC = 100 °C IDM Avalanche Current IAS Avalanche Energy Repetitive Avalanche Energy3 L = 0.1mH EAS L = 0.05mH EAR Power Dissipation TC = 25 °C TC = 100 °C Operating Junction & Storage Temperature Range PD Tj, Tstg 100% UIS testing in condition of VD=15V, L=0.
Published: |