EMP21N03HC
N-Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
30V
RDSON (MAX.)
2.1mΩ
123A
N Channel MOSFET
UIS, Rg 100% Tested
Ro HS & Halogen Free & TSCA pliant
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
LIMITS
UNIT
Gate-Source Voltage
±20
TC = 25 °C
Continuous Drain Current1
TA= 25 °C(t≦10s)
Pulsed Drain Current2
TA= 25 °C(Steady-State)
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1m H, IAS=65A, RG=25Ω
Repetitive Avalanche Energy3
L = 0.05m H
211 m...
