• Part: EMP26P03H
  • Description: Single P-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 356.83 KB
Download EMP26P03H Datasheet PDF
Excelliance MOS
EMP26P03H
Description : P-CH BVDSS -30 V RDSON (MAX.)@VGS=-10V RDSON (MAX.)@VGS=-4.5V ID @TC=25℃ 2.5 mΩ 4.0 mΩ -230 A Single P Channel MOSFET UIS, Rg 100% Tested Ro HS & Halogen Free & TSCA pliant - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage ±25 Continuous Drain Current TC = 25 °C TC = 100 °C -230 -146 Continuous Drain Current TA = 25 °C TA = 70 °C -24 -19 Pulsed Drain Current1 -453 Avalanche Current -90 Avalanche Energy L = 0.1m H Repetitive Avalanche Energy2 L = 0.05m H Power Dissipation TC = 25 °C TC = 100 °C 201.6 80.6 Power...