• Part: EMP29N04AS
  • Description: Single N-Channel Logic Level Enhancement Mode Field Effect Transistor
  • Category: Transistor
  • Manufacturer: Excelliance MOS
  • Size: 534.54 KB
Download EMP29N04AS Datasheet PDF
Excelliance MOS
EMP29N04AS
Description : N-CH BVDSS 40V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 3.6mΩ 4.8mΩ ID @TC=25℃ 83.0A ID @TA=25℃ 16.0A Single N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Repetitive Avalanche Energy2 TA = 25 °C TA = 70 °C L = 0.1m H L = 0.05m H Power Dissipation Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 70 °C Operating Junction & Storage Temperature Range Tj, Tstg - 100% UIS testing in condition of VD=20V, L=0.1m H, VG=10V, IL=44A, Rated VDS=40V N-CH - THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL...