F59L1G81A memory equivalent, 1 gbit (128m x 8) 3.3v nand flash memory.
z Voltage Supply: 2.6V ~ 3.6V z Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K +.
such as solid state file storage and other portable applications requiring non-volatility.
Elite Semiconductor Memory T.
Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typic.
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