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F59L1G81LA - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Key Features

  • Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us - typical 950us - max. - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardw.

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Datasheet Details

Part number F59L1G81LA
Manufacturer ESMT
File Size 1.02 MB
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L1G81LA Datasheet

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Other Datasheets by ESMT

Part Number Description
F59L1G81LB 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BCG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81LB-25BG2M 1 Gbit (128M x 8) 3.3V NAND Flash Memory
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F59L1G81MA-25BCG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESMT Flash FEATURES Voltage Supply: 3.3V (2.7V~3.6V) Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Program time: 400us - typical 950us - max. - Block Erase time: 3ms - typical Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81LA (2Y) 1 Gbit (128M x 8) 3.