F59L1G81LB-25TG2M - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

ESMT

Datasheet Details

The device is a 128Mx8bit with spare 4Mx8bit capacity.

Voltage Supply: 3.3V (2.7V~3.6V).
Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit.
Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte.
Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V).
Memory Cell: 1bit/Memory Cell.
Fast Write Cycle Time - Program time: 400us - typical - Block Erase time: 4ms - typical.
Command/Address/Da.

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Published: Apr 2, 2019 |