F59L1G81LB-25TG2M memory equivalent, 1 gbit (128m x 8) 3.3v nand flash memory.
* Voltage Supply: 3.3V (2.7V~3.6V)
* Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
* Automatic Program and Erase - Pa.
The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be eras.
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