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F59L1G81MA-25BCIG2Y - 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Download the F59L1G81MA-25BCIG2Y datasheet PDF. This datasheet also covers the F59L1G81MA variant, as both devices belong to the same 1 gbit (128m x 8) 3.3v nand flash memory family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max. ) - Serial Access: 25ns (Min. ) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (F59L1G81MA-EliteSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number F59L1G81MA-25BCIG2Y
Manufacturer ESMT
File Size 1.17 MB
Description 1 Gbit (128M x 8) 3.3V NAND Flash Memory
Datasheet download datasheet F59L1G81MA-25BCIG2Y Datasheet

📁 Similar Datasheet

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F59L512M81A 512Mbit (64M x 8) 3.3V NAND Flash Memory Elite Semiconductor
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Other Datasheets by ESMT

Part Number Description
F59L1G81MA-25BCG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25BIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25TG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory
F59L1G81MA-25TIG2Y 1 Gbit (128M x 8) 3.3V NAND Flash Memory

Full PDF Text Transcription

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ESMT Flash FEATURES z Voltage Supply: 3.3V (2.7V~3.6V) z Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit z Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte z Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V) z Memory Cell: 1bit/Memory Cell z Fast Write Cycle Time - Program time: 350us - typical - Block Erase time: 3.5ms - typical z Command/Address/Data Multiplexed I/O Port z Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MA (2Y) Operation Temperature Condition -40°C~85°C 1 Gbit (128M x 8) 3.
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