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2SC1972 - silicon NPN epitaxial planar type transistor

General Description

The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.

Key Features

  • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz.
  • Emitter ballasted construction for reliability and performance.
  • Manufactured incorporating recyclable RoHS compliant materials.
  • Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz.

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Datasheet Details

Part number 2SC1972
Manufacturer Eleflow
File Size 711.05 KB
Description silicon NPN epitaxial planar type transistor
Datasheet download datasheet 2SC1972 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC1972 Description The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications. Features • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz • Emitter ballasted construction for reliability and performance. • Manufactured incorporating recyclable RoHS compliant materials. • Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz. Application 10 to 14 watts output power amplifier applications within the VHF band.