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2SC1972 - silicon NPN epitaxial planar type transistor

Description

The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications.

Features

  • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz.
  • Emitter ballasted construction for reliability and performance.
  • Manufactured incorporating recyclable RoHS compliant materials.
  • Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz.

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Datasheet Details

Part number 2SC1972
Manufacturer Eleflow
File Size 711.05 KB
Description silicon NPN epitaxial planar type transistor
Datasheet download datasheet 2SC1972 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SC1972 Description The Eleflow 2SC1972 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers within the VHF band, ideal for mobile radio applications. Features • High power gain: Gpe ≥ 7.5dB @Vcc = 13.5V, Po = 14W, f = 175MHz • Emitter ballasted construction for reliability and performance. • Manufactured incorporating recyclable RoHS compliant materials. • Ability to periodically withstand in excess of 20:1 VSWR load when operated at Vcc = 15.2V, Po = 18W, f = 175MHz. Application 10 to 14 watts output power amplifier applications within the VHF band.
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