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2SC1971 - NPN SILICON RF POWER TRANSISTOR

Description

The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications.

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Datasheet Details

Part number 2SC1971
Manufacturer Advanced Semiconductor
File Size 80.91 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet 2SC1971 Datasheet

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2SC1971 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2SC1971 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • • • Replaces Original 2SC1971 in Most Applications High Gain Reduces Drive Requirements Economical TO-220CE Package PACKAGE STYLE TO-220AB (COMMON EMITTER) MAXIMUM RATINGS IC VCBO PDISS TSTG θJC 2.0 A 35 V 12.5 W @ TC = 25 °C -55 °C to +150 °C 10 °C/W 1 = BASE 2 = EMITTER 3 = COLLECTOR TAB = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO hFE C IC = 50 mA IC = 10 mA TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 17 35 4.0 500 500 UNITS V V V µA µA --pF dB % W IE = 5.0 mA VCES = 25 V VEB = 3.0 V VCE = 10 V V = 30 V PIN = 0.6 W IC = 100 mA f = 1.0 MHz f =175 MHz 10 50 15 180 CB OB www.DataSheet4U.
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