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2SC1971 - Silicon NPN Power Transistor

General Description

High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V High Reliability APPLICATIONS

Designed for RF power amplifiers on VHF band mobile radio applications.

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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage RBE= ∞ Emitter-Base Voltage Collector Current Collector Power Dissipation @TC=25℃ PC w w s c s i . w 17 4 2 12.5 1.5 150 -55~150 V V n c .