2SC1971 transistor equivalent, silicon npn power transistor.
*Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL V.
*High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V
*High Reliability
APPLICATIONS
*Designed for RF power amplifiers on VHF band mobile radio applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL VCBO VCEO VEBO IC PARAMETER Colle.
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