2SC1970 transistor equivalent, silicon npn power transistor.
*Designed for RF power amplifiers on VHF band mobile radio
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
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*High Power Gain-
: Gpe≥ 9.2dB,f= 175MHz, PO= 1W; VCC= 13.5V
*High Reliability
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
*Designed for RF power amplifi.
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