* LD-MOS Technology with the Lowest Figure of Merit: RDS(on) = 85mΩ to Minimize On-State Losses Qg = 3.7nC for Ultra-Fast Switching
* Vgs(th) = -0.6V typ. for a L.

Applications
* Battery Management
* Load Switch
* Battery Protection Features
* LD-MOS Technology with.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications
* Battery Management
* Load .

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