DMP1008UCB9 mosfet equivalent, p-channel mosfet.
* LD-MOS Technology with the Lowest Figure of Merit:
* RDS(ON) = 5.7mΩ to Minimize On-State Losses
* Qg = 8.2nC for Ultra-Fast Switching
* VGS(TH) = -0.6V.
requiring specific change
control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 1694.
This 3rd generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal imped.
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