DMP1018UCB9 datasheet, mosfet equivalent, Diodes

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Features and benefits

* LD-MOS technology with the lowest Figure of Merit: RDS(on) = 12mΩ to Minimize On-State Losses Qg = 4.9nC for Ultra-Fast Switching
* Vgs(th) = -0.8V typ. for a L.

Application

* DC-DC Converters
* Battery Management
* Load Switch DMP1018UCB9 P-CHANNEL ENHANCEMENT MODE MOSFET Feature.

Description

This 1st generation Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedan.

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