* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Max
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-.

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching per.

and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters
* Load Sw.

DMN2991UDJ

DMN2991UDR4

DMN2991UFB4

DMN2991UFZQ

DMN2991UTQ

DMN2990UDJ

DMN2990UDJQ

DMN2990UFA

DMN2990UFB

DMN2990UFZ

DMN29B36G

DMN29B43G

DMN29B50G

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