DMN2991UT mosfet equivalent, n-channel mosfet.
* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Max
* Low Input Capacitance
* Fast Switching Speed
* Low Input/Output Leakage
* Ultra-.
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching per.
and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
* DC-DC Converters
* Load Sw.
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