DMN2991UFZQ Datasheet | Diodes Incorporated

20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID Max TA = +25°C 0.55A 0.50A 0.41A 0.35A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications. Applications - General-purpose interfacing switches - Power-management functions - Analog switches X2-DFN0606-3 Features and Benefits - Low Package Profile, 0.42mm Maximum Package Height - 0.62mm × 0.62mm Package Footprint - Low On-Resistance - Very Low Gate Threshold Voltage, 1.0V Maximum -...