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DMN2991UTQ - N-CHANNEL MOSFET

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

DC-DC Converters Load Switch Power Management Func

Features

  • Low On-Resistance.
  • Very Low Gate Threshold Voltage, 1.0V Max.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Gate.
  • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN2991UTQ is suitable for automotive.

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Other Datasheets by Diodes Incorporated

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DMN2991UT N-CHANNEL MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEW PRODUCT DMN2991UTQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 3Ω @ VGS = 4.5V 4Ω @ VGS = 2.5V 6Ω @ VGS = 1.8V ID TA = +25°C 0.3A 0.26A 0.21A Features and Benefits  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Gate  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  The DMN2991UTQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://www.diodes.
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