DMN2991UTQ Datasheet N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: NEW PRODUCT DMN2991UTQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) 3Ω @ VGS = 4.5V 4Ω @ VGS = 2.5V 6Ω @ VGS = 1.8V ID TA = +25°C 0.3A 0.26A 0.

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DMN2991UTQ n-channel mosfet by Diodes Incorporated - Datasheet Preview

Datasheet Details

Part number	DMN2991UTQ
Manufacturer	Diodes Incorporated
File Size	559.17 KB
Description	N-CHANNEL MOSFET
Download	DMN2991UTQ Download (PDF)

General Description

and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

 DC-DC Converters  Load Switch  Power Management Functions  Case: SOT523  Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  Matte Tin Annealed over Alloy 42 Leadframe.

Key Features

Low On-Resistance.
Very Low Gate Threshold Voltage, 1.0V Max.
Low Input Capacitance.
Fast Switching Speed.
Low Input/Output Leakage.
Ultra-Small Surface Mount Package.
ESD Protected Gate.
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3).
The DMN2991UTQ is suitable for automotive.

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