* Dual N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Max
* Low Input Capacitance
* Fast Switching Speed
* Ultra-Sma.

Features
* Dual N-Channel MOSFET
* Low On-Resistance
* Very Low Gate Threshold Voltage, 1.0V Max
* Low.

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features
* Dual N-Channel MOSFET
* Low On-Resistance
* .

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