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CY62146CV18 - 256K x 16 Static RAM

Description

of read and write modes.

The CY62146CV18 is available in a 48-Ball FBGA package.

The CY62146CV18 is a high-performance CMOS static RAM organized as 256K words by 16 bits.

Features

  • High Speed.
  • 55 ns and 70 ns availability.
  • Low voltage range:.
  • 1.65V.
  • 1.95V.
  • Pin Compatible with CY62146BV18.
  • Ultra-low active power.
  • Typical Active Current: 0.5 mA @ f = 1 MHz.
  • Typical Active Current: 2 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power reduces power consu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62146CV18 MoBL2™ 256K x 16 Static RAM Features • High Speed — 55 ns and 70 ns availability • Low voltage range: — 1.65V–1.95V • Pin Compatible with CY62146BV18 • Ultra-low active power — Typical Active Current: 0.5 mA @ f = 1 MHz • • • • — Typical Active Current: 2 mA @ f = fmax (70 ns speed) Low standby power Easy memory expansion with CE and OE features Automatic power-down when deselected CMOS for optimum speed/power reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).
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