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Cypress Semiconductor Electronic Components Datasheet

CY7C1371S Datasheet

18-Mbit (512K x 36) Flow-Through SRAM

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CY7C1371S
18-Mbit (512K × 36) Flow-Through SRAM
with NoBL™ Architecture
18-Mbit (512K × 36) Flow-Through SRAM with NoBL™ Architecture
Features
No Bus Latency(NoBL) architecture eliminates dead cycles
between write and read cycles
Supports up to 133-MHz bus operations with zero wait states
Data is transferred on every clock
Pin-compatible and functionally equivalent to ZBT™ devices
Internally self-timed output buffer control to eliminate the need
to use OE
Registered inputs for flow through operation
Byte Write capability
3.3 V/2.5 V I/O power supply (VDDQ)
Fast clock-to-output times
6.5 ns (for 133-MHz device)
Clock Enable (CEN) pin to enable clock and suspend operation
Synchronous self-timed writes
Asynchronous Output Enable
Available in JEDEC-standard Pb-free 100-pin TQFP, and non
Pb-free 119-ball BGA
Three chip enables for simple depth expansion
Automatic Power down feature available using ZZ mode or CE
deselect
IEEE 1149.1 JTAG-Compatible Boundary Scan
Burst Capability – linear or interleaved burst order
Low standby power
Functional Description
The CY7C1371S is a 3.3 V, 512K × 36 Synchronous flow through
Burst SRAM designed specifically to support unlimited true
back-to-back Read/Write operations with no wait state insertion.
The CY7C1371S is equipped with the advanced No Bus Latency
(NoBL) logic required to enable consecutive Read/Write opera-
tions with data being transferred on every clock cycle. This
feature dramatically improves the throughput of data through the
SRAM, especially in systems that require frequent Write-Read
transitions.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. The clock input is qualified by the
Clock Enable (CEN) signal, which when deasserted suspends
operation and extends the previous clock cycle. Maximum
access delay from the clock rise is 6.5 ns (133-MHz device).
Write operations are controlled by the two or four Byte Write
Select (BWX) and a Write Enable (WE) input. All writes are
conducted with on-chip synchronous self-timed write circuitry.
Three synchronous Chip Enables (CE1, CE2, CE3) and an
asynchronous Output Enable (OE) provide for easy bank
selection and output tri-state control. To avoid bus contention,
the output drivers are synchronously tri-stated during the data
portion of a write sequence.
Selection Guide
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
Description
133 MHz
6.5
210
70
Unit
ns
mA
mA
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 001-43826 Rev. *F
• San Jose, CA 95134-1709 • 408-943-2600
Revised March 18, 2016


Cypress Semiconductor Electronic Components Datasheet

CY7C1371S Datasheet

18-Mbit (512K x 36) Flow-Through SRAM

No Preview Available !

CY7C1371S
Logic Block Diagram – CY7C1371S
A0, A1, A
MODE
CLK C
CEN
CE
ADV/LD
BW A
BW B
BW C
BW D
WE
OE
CE1
CE2
CE3
ZZ
ADDRESS
REGISTER
A1
A0
D1
D0
ADV/LD
C
WRITE ADDRESS
REGISTER
BURST
LOGIC
Q1
Q0
A1'
A0'
WRITE REGISTRY
AND DATA COHERENCY
CONTROL LOGIC
WRITE
DRIVERS
MEMORY
ARRAY
S
E
N
S
E
A
M
P
S
READ LOGIC
SLEEP
CONTROL
INPUT E
REGISTER
O
U
T
DP
AU
TT
A
B
SU
TF
EF
EE
RR
IS
NE
G
DQs
DQP A
DQP B
DQP C
DQP D
Document Number: 001-43826 Rev. *F
Page 2 of 29


Part Number CY7C1371S
Description 18-Mbit (512K x 36) Flow-Through SRAM
Maker Cypress
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CY7C1371S Datasheet PDF






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