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CY7C1371B - (CY7C1371B / CY7C1373B) 512K x 36/1M x 18 Flow-Thru SRAM

Datasheet Summary

Description

The CY7C1371B/CY7C1373B is 3.3V, 512K × 36 and 1M × 18 synchronous flow-thru burst SRAMs, respectively designed to support unlimited true back-to-back Read/Write operations without the insertion of wait states.

Features

  • Pin compatible and functionally equivalent to ZBT devices.
  • Supports 117-MHz bus operations with zero wait states.
  • Data is transferred on every clock.
  • Internally self-timed output buffer control to eliminate the need to use asynchronous OE.
  • Registered inputs for flow-thru operation.
  • Byte Write capability.
  • Common I/O architecture.
  • Fast clock-to-output times.
  • 7.5 ns (for 117-MHz device).
  • 8.5 ns (for 100-MHz.

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Datasheet preview – CY7C1371B

Datasheet Details

Part number CY7C1371B
Manufacturer Cypress Semiconductor
File Size 932.55 KB
Description (CY7C1371B / CY7C1373B) 512K x 36/1M x 18 Flow-Thru SRAM
Datasheet download datasheet CY7C1371B Datasheet
Additional preview pages of the CY7C1371B datasheet.

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Full PDF Text Transcription

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73B CY7C1371B CY7C1373B 512K x 36/1M x 18 Flow-Thru SRAM with NoBL™ Architecture Features • Pin compatible and functionally equivalent to ZBT devices • Supports 117-MHz bus operations with zero wait states — Data is transferred on every clock • Internally self-timed output buffer control to eliminate the need to use asynchronous OE • Registered inputs for flow-thru operation • Byte Write capability • Common I/O architecture • Fast clock-to-output times — 7.5 ns (for 117-MHz device) — 8.5 ns (for 100-MHz device) • • • • • • • • — 10.0ns (for 83-MHz device) Single 3.3V –5% and +10% power supply VDD Separate VDDQ for 3.3V or 2.
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