PED645K mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS = 18V, ID = 10A
RDS(ON) < 6.5mΩ @ VGS=4.5V RDS(ON) < 7mΩ @ VGS=3.8V RDS(ON) < 8.5mΩ @ VGS=2.5V
Schematic diagram
ESD Rating: 2000V HBM
* High Power and c.
It is ESD protected.
General Features
* VDS = 18V, ID = 10A
RDS(ON) < 6.5mΩ @ VGS=4.5V RDS(ON) < 7mΩ @ VGS=3.8V RD.
The PED645K uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
General Features
* VDS = 18V, ID = 10A
RDS(ON) < 6.5mΩ @ VGS=4.5V RDS(ON) < 7mΩ .
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