MXN2384 mosfet equivalent, dual n-channel power mosfet.
Schematic diagram
* VDS =20V，ID =9.5A
@VGS=4.5V RDS(ON)(Typ.)=7.8mΩ
@VGS=4.2V RDS(ON)(Typ.)=8mΩ
@VGS=3.8V RDS(ON)(Typ.)=8.3mΩ @VGS=2.5V RDS(ON)(Typ.)=11mΩ ESD Rat.
It is ESD protested..
General Featuies
MXN2384
General Features Schematic diagram
* VDS =20V，ID =9.5A
@VGS=4.5V .
The MXN2384 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM
applications. It is ESD protested..
General Featuies
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