MXN2508 mosfet equivalent, dual n-channel power mosfet.
Schematic diagram
* VDS =20V,ID =8A
@VGS=4.5V RDS(ON)(Typ.)=14mΩ
@VGS=4.2V RDS(ON)(Typ.)=14.4mΩ
@VGS=3.8V RDS(ON)(Typ.)=15.6mΩ
@VGS=2.5V RDS(ON)(Typ.)=19mΩ
ESD R.
it is ESD protected.
MXN2508
General Features
Schematic diagram
* VDS =20V,ID =8A
@VGS=4.5V RDS(ON)(Typ.)=14mΩ
.
The MXN2508 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.
MXN2508
General Fe.
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