MXN2512 mosfet equivalent, dual n-channel power mosfet.
Schematic diagram
* VDS =20V,ID =10A
@VGS=4.5V RDS(ON)(Typ.)=7.2mΩ
@VGS=4.2V RDS(ON)(Typ.)=7.4mΩ
@VGS=3.8V RDS(ON)(Typ.)=8mΩ
@VGS=2.5V RDS(ON)(Typ.)=10mΩ
ESD Rat.
it is ESD protected.
MXN2512
General Features
Schematic diagram
* VDS =20V,ID =10A
@VGS=4.5V RDS(ON)(Typ.)=7.2m.
The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected.
MXN2512
General Fe.
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