MXN2512 datasheet, mosfet equivalent, ChipSourceTek

Features and benefits

Schematic diagram
* VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ.)=7.2mΩ @VGS=4.2V RDS(ON)(Typ.)=7.4mΩ @VGS=3.8V RDS(ON)(Typ.)=8mΩ @VGS=2.5V RDS(ON)(Typ.)=10mΩ ESD Rat.

Application

it is ESD protected. MXN2512 General Features Schematic diagram
* VDS =20V，ID =10A @VGS=4.5V RDS(ON)(Typ.)=7.2m.

Description

The MXN2512 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as aload switch or in PWM applications.it is ESD protected. MXN2512 General Fe.

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