MXN3347 mosfet equivalent, p-channel power mosfet.
* VDS =-30V,ID =-35A
* RDS(ON) (Typ.)= 9 m Ω @ VGS=-10V
* RDS(ON) (Typ.)= 13.5m Ω @ VGS=-4.5V k High Power and current handing capability e Lead free produc.
MXN3347
Schematic diagram
General Features
* VDS =-30V,ID =-35A
* RDS(ON) (Typ.)= 9 m Ω @ VGS=-10V
* RD.
The MXN3347 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages aslow as 4.5V.This device is suitable for use as a load switch or in PWM and a wide varieer applications.
MXN3347
Schematic d.
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