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BTC2881M3 - General Purpose NPN Epitaxial Planar Transistor

Key Features

  • High breakdown voltage, BVCEO≥ 200V.
  • Large continuous collector current capability.
  • Low collector saturation voltage.
  • Complementary to BTA1201M3.
  • Pb-free lead plating and halogen-free package Symbol BTC2881M3 Outline SOT-89 B:Base C:Collector E:Emitter BCE Ordering Information Device BTC2881M3-X-T2-G Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Environment friendly grade : S for RoHS complia.

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Datasheet Details

Part number BTC2881M3
Manufacturer CYStech
File Size 272.06 KB
Description General Purpose NPN Epitaxial Planar Transistor
Datasheet download datasheet BTC2881M3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC2881M3 BVCEO IC RCESAT(MAX) Spec. No. : C316M3 Issued Date : 2007.03.28 Revised Date : 2017.11.10 Page No. : 1/7 200V 1A 0.