The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB826M3
Spec. No. : C812M3 Issued Date : 2003.05.25 Revised Date :2013.08.12 Page No. : 1/7
Features
• Low VCE(sat), VCE(sat)=-0.65 V (typical), at IC / IB = -3A / -0.1A • Excellent current gain characteristics • Pb-free lead plating package
Symbol
BTB826M3
Outline
SOT-89
B:Base C:Collector E:Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse)
Power Dissipation
VCBO VCEO VEBO
IC ICP
Pd
Power Dissipation
Pd
ESD susceptibility
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse , Pw=10ms
2. When mounting on a 40 ×40 ×0.7 mm ceramic board.
3.