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CYStech Electronics Corp.
Low Vcesat PNP Epitaxial Planar Transistor
BTB818N6
Spec. No. : C313N6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/7
Features
• Low VCE(sat), VCE(sat)=-0.2V (typical), at IC / IB =- 400mA /- 20mA • Pb-free package
Equivalent Circuit
BTB818N6
Outline
SOT-23-6L
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO -40 V
Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Peak Collector Current Peak Base Current
VCEO VEBO
IC ICM IBM
-30 -7 -1.5 -3 *1 -500
V V A A mA
Power Dissipation
PD
1.2 *2
W
Thermal Resistance, Junction to Ambient
RθJA 104 °C/W
Operating Junction and Storage Temperature Range
Note :1 Single pulse, Pw=10ms
Tj;Tstg
-55~+150
°C
2. When mounted on 25mm×25mm×1.
BTB818N6 Datasheet
