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CTL0502NS - N-Channel MOSFET

Description

The CTL0502NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.

Power Management Lithium Ion Battery Package Outline Pin 2 Schematic Drain Pin 1 Pin 3 CT M

Features

  • Drain-Source Breakdown Voltage VDSS 20 V.
  • Drain-Source On-Resistance RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A.
  • Continuous Drain Current at TC=25℃ID = 5.0A.
  • Advanced high cell density Trench Technology.
  • RoHS Compliance & Halogen Free.

📥 Download Datasheet

Datasheet Details

Part number CTL0502NS
Manufacturer CT Micro
File Size 965.99 KB
Description N-Channel MOSFET
Datasheet download datasheet CTL0502NS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CTL0502NS N-Channel Enhancement MOSFET Features  Drain-Source Breakdown Voltage VDSS 20 V  Drain-Source On-Resistance RDS(ON) 21m, at VGS= 4.5V, ID= 5.0A RDS(ON) 24m, at VGS= 2.5V, ID= 3.5A RDS(ON) 31m, at VGS= 1.8V, ID= 2.8A  Continuous Drain Current at TC=25℃ID = 5.0A  Advanced high cell density Trench Technology  RoHS Compliance & Halogen Free Description The CTL0502NS uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications.
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