CSD30N55 mosfet equivalent, n-channel trench power mosfet.
* VDS = 30V,ID =80A RDS(ON) < 6.5mΩ @ VGS =10V RDS(ON) < 10.5mΩ @ VGS =5V
* High Power and current handing capability
* Lead free product is acquired
* Su.
Features
* VDS = 30V,ID =80A RDS(ON) < 6.5mΩ @ VGS =10V RDS(ON) < 10.5mΩ @ VGS =5V
* High Power and current han.
The CSD30N55 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = 30V,ID =80A RDS(ON) < 6..
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