CSD30N30 datasheet, mosfet equivalent, CASS

Features and benefits

* VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* Surf.

Application

Features
* VDS = 30V,ID =110A RDS(ON) < 4mΩ @ VGS =10V RDS(ON) < 7mΩ @ VGS =4.5V
* High Power and current hand.

Description

The CSD30N30 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features
* VDS = 30V,ID =110A RDS(ON) .

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