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CSD30N39 Datasheet, CASS

CSD30N39 mosfet equivalent, n-channel trench power mosfet.

CSD30N39 Avg. rating / M : 1.0 rating-113

datasheet Download (Size : 800.02KB)

CSD30N39 Datasheet
CSD30N39
Avg. rating / M : 1.0 rating-113

datasheet Download (Size : 800.02KB)

CSD30N39 Datasheet

Features and benefits


* VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* Sur.

Application

Features
* VDS = 30V,ID =85A RDS(ON) < 5.8mΩ @ VGS =10V RDS(ON) < 8mΩ @ VGS =4.5V
* High Power and current hand.

Description

The CSD30N39 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features
* VDS = 30V,ID =85A RDS(ON) < .

Image gallery

CSD30N39 Page 1 CSD30N39 Page 2 CSD30N39 Page 3

TAGS

CSD30N39
N-Channel
Trench
Power
MOSFET
CASS

Manufacturer


CASS

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