CSD30N210 mosfet equivalent, n-channel trench power mosfet.
* VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* Sur.
Features
* VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
* High Power and current hand.
The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications.
Features
* VDS = 30V,ID =23A RDS(ON) <.
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