logo

CSD30N210 Datasheet, CASS

CSD30N210 mosfet equivalent, n-channel trench power mosfet.

CSD30N210 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 796.62KB)

CSD30N210 Datasheet

Features and benefits


* VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
* High Power and current handing capability
* Lead free product is acquired
* Sur.

Application

Features
* VDS = 30V,ID =23A RDS(ON) < 32mΩ @ VGS =10V RDS(ON) < 45mΩ @ VGS =4.5V
* High Power and current hand.

Description

The CSD30N210 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a wide variety of applications. Features
* VDS = 30V,ID =23A RDS(ON) <.

Image gallery

CSD30N210 Page 1 CSD30N210 Page 2 CSD30N210 Page 3

TAGS

CSD30N210
N-Channel
Trench
Power
MOSFET
CASS

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts