C4H2350N05 transistor equivalent, power gan transistor.
* Excellent digital pre-distortion capability
* High efficiency
* Designed for broadband operation
* Lower output capacitance for improved performance in .
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 .
5 W GaN packaged power transistor for base station applications.
Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB application demo circuit. VDS = 48 V; IDq = 10 mA; unless otherwise specified.
Test signal
f
IDq
.
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