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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC4007
DESCRIPTION
·Low Collector Saturation Voltage
: VCE(sat)= 1.0V(Max)@ IC= 2A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V (Min)
·Wide Area of Safe Operation
·Complement to Type 2SA1634
APPLICATIONS
·Designed for audio and general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
i.cnSYMBOL
PARAMETER
VALUE
UNIT
.iscsemVCBO
Collector-Base Voltage
100 V
wwwVCEO
Collector-Emitter Voltage
80 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
4A
ICM Collector Current-Peak
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
6A
40
W
2
150 ℃
Tstg Storage Temperature Range
-55~150
℃
isc Website：www.iscsemi.cn
Datasheet pdf - http://www.DataSheet4U.net/
