C4002 - 2SC4002

Features

High breakdown voltage.
Adoption of MBIT process.
Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.45 123 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions Electri.

Sanyo Semicon Device

Datasheet Details

Part number	C4002
Manufacturer	Sanyo Semicon Device
File Size	75.56 KB
Description	2SC4002
Datasheet	C4002 Datasheet
Additional preview pages of the C4002 datasheet.

📁 Similar Datasheet

C4002 - NPN Triple Diffused Planar Silicon Transistor (ON Semiconductor)
C4002 - NPN Silicon Triple Diffused Planar Transistor (SEMTECH)
C4002 - NPN Silicon Triple Diffused Planar Transistor (Bluecolour)
C400 - MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE (Intronice)
C4001 - 2SC4001 (NEC)
C4003 - 2SC4003 (Sanyo)
C4004 - 2SC4004 (Panasonic)
C4005 - 2SC4005 (Sanyo)
C4006 - 2SC4006 (Sanyo)
C4007 - 2SC4007 (Inchange Semiconductor)

Other Datasheets by Sanyo Semicon Device

Full PDF Text Transcription

Click to expand full text

Ordering number:EN2960 NPN Triple Diffused Planar Silicon Transistor 2SC4002 High-Voltage Driver Applications Features · High breakdown voltage. · Adoption of MBIT process. · Excellent hFE linearity. Package Dimensions unit:mm 2003B [2SC4002] 5.0 4.0 4.0 0.6 2.0 14.0 5.0 0.45 0.5 0.

Published: Jan 5, 2015 |