Datasheet4U Logo Datasheet4U.com

C4004 - 2SC4004

Features

  • 0.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2.
  • High-speed switching.
  • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1.
  • Wide safe operation area.
  • Satisfactory linearity of forward current transfer ratio hFE.
  • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 /.
  • Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+.
  • 00..12 Parameter Symbol Rating Unit e ) Collector-.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
C400 MONOLITHIC WIDEBAND CRT DISTORTION CORRECTION DEVICE Intronice
C4001 2SC4001 NEC
C4002 2SC4002 Sanyo Semicon Device
C4002 NPN Triple Diffused Planar Silicon Transistor ON Semiconductor
C4002 NPN Silicon Triple Diffused Planar Transistor SEMTECH

Other Datasheets by Panasonic

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Power Transistors 2SC4004 Silicon NPN triple diffusion planar type 4.2±0.2 16.7±0.3 7.5±0.2 0.7±0.1 For high breakdown voltage high-speed switching ■ Features 10.0±0.2 5.5±0.2 Unit: mm 4.2±0.2 2.7±0.2 • High-speed switching • High collector-base voltage (Emitter open) VCBO φ 3.1±0.1 • Wide safe operation area • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw 1.4±0.1 1.3±0.2 / ■ Absolute Maximum Ratings TC = 25°C 14.0±0.5 Solder Dip (4.0) 0.8±0.1 0.5+–00..12 Parameter Symbol Rating Unit e ) Collector-base voltage (Emitter open) VCBO 900 V c type Collector-emitter voltage (E-B short) VCES 900 V n d tage.
Published: |