BLS8G2731LS-400P transistor equivalent, ldmos s-band radar power transistor.
* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual side.
in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; t.
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
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