Datasheet Details
| Part number | BLS8G2731LS-400P |
|---|---|
| Manufacturer | Ampleon |
| File Size | 363.99 KB |
| Description | LDMOS S-band radar power transistor |
| Datasheet |
 BLS8G2731LS-400P Datasheet
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General Description
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1.
Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Key Features
- High efficiency.
- Excellent ruggedness.
- Designed for S-band operation.
- Excellent thermal stability.
- Easy power control.
- Integrated dual sided ESD protection enables excellent off-state isolation.
- High flexibility with respect to pulse formats.
