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BLS8G2731LS-400P Datasheet, Ampleon

BLS8G2731LS-400P transistor equivalent, ldmos s-band radar power transistor.

BLS8G2731LS-400P Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 363.99KB)

BLS8G2731LS-400P Datasheet
BLS8G2731LS-400P Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 363.99KB)

BLS8G2731LS-400P Datasheet

Features and benefits


* High efficiency
* Excellent ruggedness
* Designed for S-band operation
* Excellent thermal stability
* Easy power control
* Integrated dual side.

Application

in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; t.

Description

400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s;  = 2 %; IDq = 200 mA; in a class-AB demo test circuit. Tes.

Image gallery

BLS8G2731LS-400P Page 1 BLS8G2731LS-400P Page 2 BLS8G2731LS-400P Page 3

TAGS

BLS8G2731LS-400P
LDMOS
S-band
radar
power
transistor
Ampleon

Manufacturer


Ampleon

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