Click to expand full text
BLS8G2731L-400P; BLS8G2731LS-400P
LDMOS S-band radar power transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.1 GHz.
Table 1. Typical performance Typical RF performance at Tcase = 25 C; tp = 50 s; = 2 %; IDq = 200 mA; in a class-AB demo test circuit.
Test signal
f
VDS PL(1dB)
Gp [1] D [1]
PL(2dB)
Gp [2]
D [2]
(GHz)
(V) (W)
(dB) (%)
(W)
(dB) (%)
pulsed RF
2.7 to 2.9 32 540
11 45 610
10 46
2.9 to 3.1 32 490 12 47 550 11 49
2.7 to 3.1 32 530 12 45 590 11 47
[1] at 1 dB gain compression. [2] at 2 dB gain compression.
1.
BLS8G2731L-400P Datasheet
